国際会議

2013年

  1. M. Huda, J. Liu, Y. Yin, and S. Hosaka
    “Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots”
    8th NANOSMAT, Granada, Spain (Sept. 2013)
  2. S. Hosaka
    “Margin of 30-keV-EB drawing and graphoepitaxy of PS-PDMS self assembly with EB-drawn guide lines for formation of sub-10-nm-sized dot arrays”
    the 39th International Micro & Nano Engineering Conference (MNE2013), London, UK (Sept. 2013)
  3. M. Huda, J. Liu, Y. Yin, and S. Hosaka
    “Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask”
    the 39th International Micro & Nano Engineering Conference (MNE2013), London, UK (Sept. 2013)
  4. Y. Yin, and S. Hosaka
    “Nano-contact phase-change memory for ultralow writing reset current”
    the 39th International Micro & Nano Engineering Conference (MNE2013), London, UK (Sept. 2013)
  5. Y. Yin, R. Kobayashi, Y. Zhang, R. I. Alip, and S. Hosaka
    “Staircase pulse programming for recrystallization control in phase-change memory”
    the 39th International Micro & Nano Engineering Conference (MNE2013), London, UK (Sept. 2013)
  6. H. Sone, Y. Nakamura, Y. Suda, and S. Hosaka
    “Fabrication using Focused Ion Beam Processing of Devices Employing Silicon-Based Nanowires Synthesized by Vapor-Loquid-Solid Growth”
    3rd International Conference on Applied Mechanics, Materials, and Manufacturing, Dailan, China (Aug. 2013)
  7. Y. Yin, and S. Hosaka
    “TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory”
    5th International Conference on Mechanical and ElectricalTechnology (ICMET2013), Chengdu. China (Jul. 2013)
  8. H. Zhang, T. Komori, S. Hosaka, and Y. Yin
    “Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution”
    7th International Conference on Materials for Advanced Technologies(ICMAT), Suntec, Singapore (Jun. 2013)
  9. S. Hosaka, Y. Yin, T. Komori, and M. Huda
    “Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing”
    7th International Conference on Materials for Advanced Technologies(ICMAT), Suntec, Singapore (Jun. 2013)
  10. Y. Yin, Y. Zhang, and S. Hosaka
    “Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory”
    2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013)
  11. Y. Yin, and S. Hosaka
    “Low-Volume- Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe”
    2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013)

2012年

  1. S. Hosaka, T. Akahane, T. Komori, M. Huda, Y. Yin, N. Kihara, Y. Kamata and A. Kikitsu
    “Fusion of top-down and bottom-up technologies for singlenano-patterning(Graphoepitaxy of 6-nm-sized nanodot arrays with a pitch of 12 nm using PS-PDMS self-assemble and EB-drawn guide line template)”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  2. M. Huda, Z. Mohamad, T. Komori, Y. Yin and S. Hosaka
    “Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  3. J. Liu, M. Huda, H. Zhang, Y. Yin and S. Hosaka
    “Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  4. T. Komori, M. Huda, M. Masuda, J. Liu, Z. Mohamad, Y. Yin and S. Hosaka
    “Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5Tbit/in.² Patterned Media”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  5. H. Zhang, T. Komori, Y. Zhang, Y. Yin and S. Hosaka
    “A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  6. A. Nagao and S. Hosaka
    “Monte Carlo simulation of electron trajectory in solid for Electron Beam Lithography”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  7. R. I. Alip, Z. Mohamad, Y. Yin and S. Hosaka
    “Controlled Crystallization Process of Phase-Change Memory device by a Separate Heater Structure”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  8. Y. Yin, Y. Zhang and S. Hosaka
    “Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  9. Z. Mohamad, M. Huda, T. Komori, R. Alip, H. Zhang, Y. Yin, and S. Hosaka
    “Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion Milling”
    4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
  10. Y. Yin, R. I. Alip and S.Hosaka
    “Current-driven crystallization promotion for multilevel strage in phase-change memory”
    the 24th Symposium on Phase Change Oriented Science (PCOS2012), Hamamatsu, Japan(Nov. 2012)
  11. S. Hosaka, T. Akabane, M. Huda, J. Liu, Y. Yin, N. Kihara, Y. Kamata and A, Kikitsu
    “Ordering of 12nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording”
    the 38th International Micro & Nano Engineering Conference (MNE2012), Toulose, France (Sep. 2012)
  12. Y. Yin and S. Hosaka
    “Controlled promotion of crystallization for multilevel phase-change memory”
    the 38th International Micro & Nano Engineering Conference (MNE2012), Toulose, France (Sep. 2012)
  13. Y. Yin and S. Hosaka
    “Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory”
    the 38th International Micro & Nano Engineering Conference (MNE2012), Toulose, France (Sep. 2012)
  14. S. Hosaka, Z. Mohamad, T. Akahane, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda and M. Suzuki
    “Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism(XMCD)”
    2012 International Conference on Mechatronics and Intelligent Materials (MIM2012), Guilin, China (May. 2012)
  15. Y. Yin and S. Hosaka
    “Multi-Level Storage in Phase-Change Memory”
    2012 International Conference on Mechatronics and Intelligent Materials (MIM2012), Guilin, China (May. 2012)

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2011年

  1. S. Hosaka, T. Noguchi, S. Kobayashi, R. I. Alip and Y. Yin
    “Random access multi-levels phase changing using pulse modulation”
    the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), Atami, Japan (Nov. 2011)
  2. Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi and S. Hosaka
    “Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  3. Z. Mohamad, T. Komori, T. Akahane, R. I. Alip, H. Zhang, Y. Yin S. Hosaka
    “Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  4. R. I. Alip, R. Kobayashi, Y. Zhang, Y. Yin S. Hosaka
    “A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  5. T. Akahane, M. Huda, Z. Mohamad, Y. Yin and S. Hosaka
    “Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM)”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  6. T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin and S. Hosaka
    “The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  7. H. Zhang, T. Komori, Y. Yin S. Hosaka
    “Calculation of High-contrast HSQ resist using Energy Deposition Distribution in EB lithography”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  8. S. Kurokami, Z. Mohamad, Y. Yin, S. Hosaka, T. Fuju, Y. Sueyoshi and H. Okano
    “Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  9. S. Hosaka, Z. Mohamad, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake and M. Suzuki
    Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD)”
    3nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
  10. M. Huda, Y. Yin and S. Hosaka
    “Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording”
    The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011)
  11. S. Hosaka, T. Akahane, M Huda, T. Komori and Y. Yin
    “Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates”
    The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011)
  12. S. Hosaka, Z. Mohamad, M. Shirai, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda and M. Suzuki
    “Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR”
    the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011)
  13. H. Zhang, Y. Yin and S. Hosaka
    “Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography”
    the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011)
  14. Y. Yin, T. Itagawa and S. Hosaka
    “10-nm-Order-Wide Nanowire Phase-Change Memory”
    the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011)
  15. Y. Yin, M. Huda, T. Akahane and S. Hosaka
    “Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording”
    the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011)
  16. Y. Yin, T. Itagawa and S. Hosaka
    “Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory”
    2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011
  17. Y. Yin and S. Hosaka
    “Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory”
    2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011)

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2010年

  1. Y. Yin and S. Hosaka
    “Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  2. R. Kobayashi, T. Noguchi, Y. Yin and S. Hosaka
    “Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  3. M. Huda, T. Tamura, Y. Yin and S. Hosaka
    “Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  4. M. Huda, T. Tamura, Y. Yin and S. Hosaka
    “Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  5. H. Zhang, T. Tamura, Y. Yin and S. Hosaka
    “Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  6. T. Tamura, H. Zhang, T. Akahane, M. Huda, T. Komori, Y. Yin and S. Hosaka
    “Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  7. S. Hosaka, T. Takizawa, D. Terauchi, Y. Yin and H. Sone
    “Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM”
    2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
  8. Y. Yin and S. Hosaka
    “Multi-level storage in phase-change memory: from multi-layer to single layer”
    The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), Atami, Japan (Nov. 2010)
  9. Y. Yin and S. Hosaka
    “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization”
    The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010)
  10. S. Hosaka, T. Akahane, M. Huda, T. Tamura and Y. Yin
    “Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates”
    The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010)
  11. S. Hosaka, T. Noguchi and Y. Yin
    “Multi-levels phase change memory using pulse modulation”
    Int. symposium EPCOS 2010, Milano, Italy (Sep. 2010), Proc. EPCOS 2010, pp. 105-110.
  12. S. Hosaka, D. Terauchi, T. Takizawa, Y. Yin and H. Sone
    “Step-in mode NC-AFM for CD measurement of fine structure in air”
    The 13th International Conference on Non-Contact Atomic Force Microscopy, Kanazawa, Japan (Aug. 2010)
  13. Y. Yin, T. Noguchi, H. Ohno and S. Hosaka
    “Ultramultiple-multi-level storage in SbTeN-based phase-change memory”
    The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010)
  14. S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato and K. Tochigi
    “Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy”
    The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010)

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2009年

  1. T. Akahane, M. Huda, Y. Yin and S. Hosaka
    “Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers”
    1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma (Japan), (2009)
  2. Y. Yin, T. Noguchi, H. Ohno and S. Hosaka
    “Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory”
    1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma (Japan), (2009)
  3. M. Huda, Y. Yin and S. Hosaka
    “Self-Assembled Nanodot Fabrication by Using Diblock Copolymer”
    1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma (Japan), (2009)
  4. T. Tamura, Y. Tanaka, T. Akahane, Y. Yin and S. Hosaka
    “Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells”
    1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma (Japan), (2009)
  5. S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato and K. Tochigi
    “Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe”
    1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma (Japan), (2009)
  6. Y. Yin, T. Noguchi, H. Ohno and S. Hosaka
    “Material engineering in phase-change memory for low power consumption and multi-level storage”
    the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian (China), (2009)
  7. S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo and J. Ariake
    “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling”
    the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian (China), (2009)
  8. S. Hosaka, Y. Tanaka, Z. Mohamad, M. Shirai, H. Sano, H. Sone and Y. Yin
    “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  9. Y. Yin, T. Noguchi, H. Ohno and S. Hosaka
    “Research on low power consumption and multi-level storage in phase-change memory”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  10. T. Noguchi, H. Ohno, Y. Yin and S. Hosaka
    “Low power lateral phase-change memory”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  11. Y. Tanaka, N. Mitomi, S. Hosaka and Y. Yin
    “Fine dot pattern formation on magnetic film for high density magnetic storage”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  12. Y. Aramomi, S. Kobuna, Y. Yin, H. Sone and S. Hosaka
    “Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  13. T. Tamura, Y. Tanaka, T. Akahane, Y. Yin and S. Hosaka
    “Fabrication of dot arrays by EB lithography for quantum dot solar cell”
    2nd international symposium on MONODZUKURI, Gunma (Japan), (2009)
  14. Y. Yin, T. Noguchi, H. Ohno, K. Ota and S. Hosaka
    “Multi-Level Storage in Lateral Phase-Change Memory”
    the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, (China), (2009)
  15. S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo and J. Ariake
    “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling”
    the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, (China), (2009)
  16. Y. Yin, T. Noguchi, H. Ohno and S. Hosaka
    “Research on low power consumption and multi-level storage in phase-change memory”
    the 2nd NSC-JST Nano Device Workshop, Hsinchu, (Taiwan), (2009)
  17. S. Hosaka, H. Sano, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone, Y. Yin
    “Nanomagnetic dot arrays fabrication based on electron beam drawing and its size effect”
    Nanomeeting-2009, Minsk, (Belarus), (2009)
  18. S. Hosaka, Y. Tanaka, Y. Aramomi, H. Sone and Y. Yin
    “Research activities on nanotechnology in Hosaka Lab”
    2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
  19. Y. Yin, T. Noguchi, H. Ohno, K. Ota and S. Hosaka
    “Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer”
    2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
  20. T. Noguchi, Y. Yin, N. Higano, K. Ota and S. Hosaka
    “Lateral type phase-change memory with top heater for low-power consumption”
    2nd International Workshop on Nanotechnology, Kusatsu, Japan. (Mar. 2009)
  21. Y. Tanaka, N. Mitomi, S. Hosaka, H. Sone and Y. Yin
    “Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage”
    2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
  22. Y. Aramomi, H. Koyabu, H. Sone, Y. Yin, S. Hosaka, E. Sato and K. Tochigi
    “Near-field Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe”
    2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
  23. S. Hosaka
    “Illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal cantilever probe”
    JST-DFT Joint Workshop on Nanoelectronics, (Invited) Kyoto, Japan (Jan. 2009).

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2008年

  1. S. Hosaka, K. Ohta, T. Noguchi, H. Sone and Y. Yin
    “Small consumption power and multi-level storage in lateral type phase-change memory with a top heater”
    PCOS 2008, Izu, Shizuoka, Japan pp. 48-52 (Dec. 2008).
  2. Y. Aramomi, H. Koyabu, H. Sone, S. Hosaka, E. Sato and K. Tochigi
    “Near-field Raman spectroscopy using illumination-collection mode with aperture-less pyramidal probe”
    16th International Colloquium on Scanning Probe Microscopy (ICSPM16), Atagawa Heights, Japan. (Dec. 2008)
  3. S. Hosaka, H. Koyabu, M. Noro, K. Takizawa, H. Sone and Y. Yin
    “Observation of Si pattern sidewall using inclination AFM for evaluation of line edge roughness”
    TBN 2008, Taipei, Taiwan (Nov. 2008).
  4. S. Hosaka, M. Shirai, Z. Mohamad, H. Sone and Y. Yin
    “Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling”
    34th International Conference on Micro- and Nano-Engineering 2008, Athens, Greece (Sep. 2008).
  5. S. Hosaka, T. Noguchi, N. Higano, K. Ohta, H. Sone and Y. Yin
    “Low power writing in lateral type phase-change memory”
    2008 European/Phase Change and Ovonics Symposium, Prague, the Czech Republic. (Sep. 2008).
  6. Y. Yin, K. Ota, T. Noguchi, H. Sone and S. Hosaka
    “Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer”
    Extended Abstracts of the International Conference on Solid State Devices and Materials, Tsukuba, Ibaraki, Japan. (Sep. 2008).
  7. Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone and S. Hosaka
    “Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory”
    MRS International Materials Research Conference 2008, Chongqing, China, D8.3 (Jun. 2008).
  8. S. Hosaka, M. Shirai, Z. Mohamad, H. Sone and Y. Yin
    “20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling”
    MRS International Materials Research Conference 2008, Chongqing, China, D8.70 (Jun. 2008).
  9. Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone and S. Hosaka
    “Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TIN layer”
    The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 27 (Jun. 2008).
  10. S. Hosaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone and Y. Yin
    “Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography”
    The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 11 (Jun. 2008).
  11. S. Hosaka, N. Higano, K. Ohta, A. Miyachi, H. Sone and Y. Yin
    “Prospective of phase-change memory”
    2008 MRS Spring Meeting, San Francisco, California, USA. (Invited) (Mar. 2008).

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2007年

  1. Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, H. Sone and S. Hosaka
    “Prototypical lateral multi-state phase-change memory with a multi-layer media”
    2007 IEEE International Conference on Electron Devices and Solid-State Circuits, Taiwan, China, 2007, pp.149-152 (Dec. 2007).
  2. H. Sone, T. Fukuda, A. Miyachi and S. Hosaka
    “Growth control of ErSi2 nanowires on Si(001) and Si(110) surfaces”
    The 3rd International Symposium on Development of Silicon-based Functional Materials, Kiryu, Japan, P-20 (Nov. 2007).
  3. S. Hosaka, Z. bin Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi and H. Sone
    “Nano-dot and pit arrays with a pitch of 25 nm x 25nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage”
    33rd International Conference on Micro- and Nano-Engineering 2007, Copenhagen, Denmark, pp. 129-130 (Sep. 2007).
  4. T. Tamura, T. Hasegawa, H. Sone, K. Terabe, M. Aono and S. Hosaka
    “Investigation of the switching time of an atomic switch controlled by solid electrochemical reaction”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 77 (July 2007).
  5. S. Hosaka, T. Shimizu, K. Mine and H. Sone
    “Possibility to form nanometer-sized optical probe in an atomic force cantilevered SNOM”
    International Conference on Nanoscience and Technology 2006, Basel, Switzerland, pp. 162 (July-Aug. 2006).
  6. H. Sone, T. Mishima, A. Miyachi, T. Fukuda and S. Hosaka
    “Growth controle of ErSi2 nanowires on Si(001) and Si(110) surface”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 69 (July 2007).
  7. K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone and S. Hosaka
    “Local heating of phase change material in PCMD”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 62 (July 2007).
  8. K. Mine, T. Shimizu, M. Ono, H. Sone and S. Hosaka
    “SNOM studies for nanometer resolution”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 51 (July 2007).
  9. A. Miyachi, T. Mishima, H. Sone and S. Hosaka
    “Atomic and nanometer scale observations on Si(110) reconstruction surface using Non-Contact Atomic Force Microscope”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 52 (July 2007).
  10. S. Hosaka, Z. bin Mohamad, M. Shirai and H. Sone
    “Challenge of nano-structure formation using novel and primitive technologies (From atomic manipulation to electron beam drawing)”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 15 (July 2007).
  11. M. Asai, A. Miyachi, Y. Yin, H. Sone and S. Hosaka
    “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 22 (July 2007).
  12. Y. Harada, H. Sone and S. Hosaka
    “Estimation of AFM tip shape from AFM image for accuate AFM measurement”
    The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 27 (July 2007).
  13. Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, D. Niida, H. Sone and S. Hosaka
    “Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory”
    2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I10-11 (March 2007).
  14. Y. Yin, D. Niida, K. Ohta, A. Miyachi, M. Asai, N. Higano, H. Sone and S. Hosaka
    “In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge2Sb2Te5 phase-change memory”
    2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I12-05 (March 2007).
  15. H. Sone, T. Mishima, A. Miyachi, T. Fukuda and S. Hosaka
    “Growth control of self-assembled ErSi2 nanowires on Si(001) and Si(110) surfaces”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).
  16. A. Miyachi, T. Mishima, H. Sone and S. Hosaka
    “Atomic and nanometer scale observations using Non-Contact Atomic Force Microscope”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).
  17. S. Hosaka, Z. Mohamad, H. Sano, M. Shirai, Y. Yin and H. Sone
    “Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).
  18. K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone and S. Hosaka
    “Direct and indirect heating of low power lateral type PCMD”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).
  19. M. Asai, A. Miyachi, Y. Yin, H. Sone and S. Hosaka
    “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).
  20. K. Mine, T. Shimizu, M. Ono, H. Sone and S. Hosaka
    “SNOM studies for nanometer resolution”
    1st Surface and Nano Science Workshop, Taipei, Taiwan, (June, 2007).

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2006年

  1. S. Hosaka, H. Sano and H. Sone
    “Terabit patterning – Electron beam drawing with a bit pitch and track pitch of 25 nm –”
    The 8th Asian Symposium on Information Storage Technology, Tokyo, Japan, Nov. 10p-6 (Nov. 2006).
  2. H. Sone, T. Fukuda, A. Miyachi and S. Hosaka
    “Attempt to form nanowires of ErSi2 on Si(001) and Si(110) surface”
    The 2nd International Symposium on Development of Silicon-based Functional Materials, Kiryu, Japan, pp.47 (Nov. 2006).
  3. S. Hosaka, K. Mine, K. Shimada, M. Asai and H. Sone
    “Possibility to read out 20-nm-sized pits using a near-field optical probe in a atomic force cantilevered SNOM”
    8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Shanghai, China, pp. 2187-2189 (Oct. 2006).
  4. Y. Yin, K. Ohta, H. Sone and S. Hosaka
    “A novel multi-channel phase-change memory cell for multi-state storage with high controllability”
    8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Shanghai, China, pp. 778-780 (Oct. 2006).
  5. Y. Yin, D. Niida, N. Higano, A. Miyachi, H. Sone and S. Hosaka
    “Ultra low operation current lateral phase-change memory”
    Extended Abstracts of the International Conference on Solid State Devices and Materials, Yokohama, Japan, pp. 562-563 (Sep. 2006).
  6. H. Sone, T. Mishima, A. Miyachi, T. Fukuda and S. Hosaka
    “Growth control of self-assembled ErSi2 nanowire on silicon surface”
    32nd International Conference on Micro- and Nano-Engineering 2006, Barcelona, Spain, pp. 655-656 (Sep. 2006).
  7. S. Hosaka, H. Sano, M. Shirai and H. Sone
    “Nano-dot arrays with a bit pitch and a track pitch of 25 nm written by EB writing for 1 Tb/in2 storage”
    32nd International Conference on Micro- and Nano-Engineering 2006, Barcelona, Spain, pp. 229-230 (Sep. 2006).
  8. S. Hosaka, H. Sano and H. Sone
    “Nano-Si-dot arrays with a bit and a track pitches of 25 nm formed by EB writing and reactive ion etching for 1 Tb/in2 storage”
    2006 Materials Research Society (MRS) Fall Meeting, Boston, Massachusetts, O4.6 (Nov. 2006).
  9. M. Asai, A. Miyachi, Y. Yin, H. Sone and S. Hosaka
    “UHV NC-AFM observation of surface structure and grain size changes of Ge2Sb2Te5 films by annealing effect”
    The 14th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 62 (Dec. 2006).
  10. K. Takeda, H. Sone, H. Okano and S. Hosaka
    “Frequency sweep method using piezo-resistive cantilever for femto-gram biosensor”
    The 14th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 118 (Dec. 2006).

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2005年

  1. Y. Yin, D. Niida, H. Sone and S. Hosaka
    “Annealing effect of phase change and current control in phase change channel transistor memory”
    2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), Kobe, Japan, pp. 644-645 (2005).
  2. H. Sone, A.Ikeuchi, T. Izumi, H. Okano and S. Hosaka
    “Femtogram mass biosensor using a self-sensing cantilever for allergy check”
    The 13th International Conference on Scanning Tunneling Microscopy/ Spectroscopy and Related Techniques, Sapporo, Japan, pp. 344 (2005).
  3. S. Hosaka, H. Sano, S. Watanabe, K. Itoh and H. Sone
    “Possibility to form an ultrahigh packed fine pit and dot array for future storage using EB-writing”
    31st International Conference on Micro and Nano Engineering 2005, Vienna, Austria, 3-d_09 (Sep. 2005).
  4. H. Sone, K. Miyazaki and S. Hosaka
    “Nano-dots formation on silver sulphide surface using electron beam induced charge”
    31st International Conference on Micro and Nano Engineering 2005, Vienna, Austria, 3-n_06 (Sep. 2005).
  5. T. Mishima, A. Miyachi, H. Sone and S. Hosaka
    “Attempt to form nanowires of ErSi2 on reconstructed silicone surface”
    The First International Symposium on Development of Silicon-based Functional Materials, Kiryu, Japan, pp. 47 (Nov. 2005).
  6. S. Hosaka, H. Sano, A. Miyachi, K. Itoh and H. Sone
    “Formation of very fine pit and dot arrays using EB writing for ultrahigh density strage toward 1 Tb/in2”
    2005 IEEE International Conference on Electron Devices and Solid-State Circuits, Hongkong, China, pp. 343-346 (Dec. 2005).
  7. Y. Yin, A. Miyachi, D. Niida, H. Sone and S. Hosaka
    “Thickness dependences of phase change and channel current control in phase-change channel transistor”
    2005 IEEE International Conference on Electron Devices and Solid-State Circuits, Hongkong, China, pp. 617-620 (Dec. 2005).
  8. S. Hosaka, T. Chiyoma, A. Ikeuchi, H. Okano, H. Sone and T. Izumi
    “Femtogram mass biosensor using a self-sensing cantilever for an allergy checker”
    2nd International Conference on Advanced Materials and Nanotechnology, Queenstown, New Zealand (2005).

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2004年以前

  1. H. Sone, Y. Fujinuma, T. Hieida, T. Chiyoma, H. Okano and S. Hosaka
    “Picogram mass sensor using microcantilever”
    SICE Annual Conference 2004, Sapporo, Japan, pp. 1508-1513 (2004).
  2. S. Hosaka, H. Sone, T. Chiyoma, H. Okano and T. Izumi
    “Femtogram mass sensor using a piezo resistive cantilever for bioscience”
    Intern. Conf. Micro and Nano Engineering 2004, Rotterdam, Netherlands, pp. 18-19 (2004).
  3. Y. Yin, H. Sone and S. Hosaka
    “Electric properties of thin GeSbTe and AgInSbTe films by annealing”
    Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, Osaka, Japan, pp. 23-26 (2004).
  4. H. Sone, A. Ikeuchi, T. Izumi, H. Okano and S. Hosaka
    “Femtogram mass biosensor using a piezoresistive cantilever in water”
    The 12th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 132 (2004).
  5. H. Sone, Y. Fujinuma, T. Hieida and S. Hosaka
    “Pico-gram mass deviation detected by resonance frequency shift of AFM cantilever”
    SICE Annual Conference 2003, Fukui, Japan, pp. 2985-2988 (2003).
  6. H. Sone, Y. Fujinuma, T. Hieida and S. Hosaka
    “Pico-gram mass sensor using piezo resistive cantilever”
    The 11th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 95 (2003).