論文

2013年

  1. Masashi Kuwahara, Rie Endo, Kouichi Tsutsumi, Fukuyoshi Morikasa, Michio Suzuki, Masahiro Susa, Tomoyoshi Endo, Toshiyasu Tadokoro, and Sumio Hosaka
    “Spectroscopic ellipsometry mesurements for liquid and solid InSb around its melting point”
    APEX, 6, 082501 (2013).
  2. Y. Yin, R. Kobayashi, and S. Hosaka
    “Recrystallization process controlled by staircase pulse in phase change memory”
    Microelectron Eng., 103 (2013).
  3. Y. Yin, S. Hosaka, W. I. Park, Y. S. Jung, K. J. Lee, B. K. You, Y. Liu, and Q. Yu
    “Current density enhancement nano-contact phase-change memory for low writing current”
    Appl. Phys. Lett., 103, 033116 1-5 (2013).
  4. M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka
    “Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer”
    Int. J. Nanotechnol., (2013).
  5. Anh Hoang Truong, Hayato Sone, Tomoyuki Kawakami, and Sumio Hosaka
    “Fabrication of hole-type microcantilevers using FIB and its evaluations”
    Key Engineering Materials, 534, 251-256 (2013).
  6. S. G. Hu, H. T. Wu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, Y. Yin, and S. Hosaka
    “Design of an electronic synapse with spike time dependent plasticity based on resistive memory device”
    J. Appl. Phys, 113, 114502 1-4 (2013).
  7. Y. Yin, R. I. Alip, and S. Hosaka
    “Current-driven crystallization promotion for multilevel storage in phase-change memory”
    Proceedings of the 24th Symposium on Phase Change Oriented Science (PCOS2012), (2013).
  8. K. Yokoyama, T. Oka, N. Kondo, and S. Hosaka
    “Pulsed-field magnetization of a bulk superconductor with holes”
    Physica C, 484, 343-347 (2013).
  9. Hayato Sone, Yasuyuki Suda, Daiki Kubota, and Sumio Hosaka
    “Vapor-Liquid-Solid Growth of Silicon-Based Nanowires for high sensitive sensor”
    Key Engineering Materials, 534, 257-261 (2013).
  10. W. I. Park, B. K. You, B. H. Mun, H. K. Seo, J. Y. Lee, S. Hosaka, Y. Yin, C. Rose, K. J. Lee, Y. S. Jung
    “Self-assembled incorporation of modulated block copolymer nanostructuers in phase-change memory for switching power reduction”
    ACS Nano, 7, 2651-2658 (2013).
  11. M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka
    “Pattern transfer of 23-nm-diameter block copolymer self-assembled nanodots using CF4 etching with carbon hard mask (CHM) as mask”
    Materials Science Forum 737, 133-136 (2013).
  12. Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, and S. Hosaka
    “Multi-level storage in lateral phase-change memory: from 3 ot 16 resistance levels”
    Key Engineering Materials, 534, 131-135 (2013).
  13. Z. Mohamad, R. I. Alip, T. Komori, T. Akahane, H. Zhang, Y. Yin, and S. Hosaka
    “Fabrication of 30-nm-pitched CoPt magnetic dot arrays using 30-keV-electron beam lithography and ion milling for patterned madia”
    Key Engineering Materials, 534, 118-121 (2013).
  14. S. Hosaka, Z. Mohamad, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki
    “Measurement of coercive force enhansed by nanometer-sizing of magnetic dot by X-ray magnetic circular dichroism (XMCD)”
    Key Engineering Materials, 534, 122-125 (2013).
  15. T. Komori, H. Zhang, T. Akahame, Z. Mohamad, Y. Yin, and S. Hosaka,
    “Effect of salty development on forming HSQ resist nanodot arrays with a pitch of 15 x 15 nm2 by 30-keV electron beam lithography”
    Key Engineering Materials, 534, 113-117 (2013).
  16. H. Zhang, T. Komori, Z. Mohamad, Y. Yin, and S. Hosaka,
    “Estimation of nano-sized pattern of calixarene and ZEP-520 resists by using EDD in Monte Carlo simulation”
    Key Engineering Materials, 534, 107-112 (2013).
  17. N. Kondo, K. Yokoyama, and S. Hosaka,
    “Magnetic separation of organic dyes in wastewater using superconducting bulk magnets”
    Key Engineering Materials, 534, 99-103 (2013).
  18. R. I. Alip, R. Kobayashi, Y. Zhang, Z. Mohamad, Y. Yin, and S. Hosaka,
    “A novel phase-change memory with a separate heater characterized by constant resistance for multilevel storage”
    Key Engineering Materials, 534, 136-140 (2013).
  19. T. Akahane, T. Komori, J. Liu, M. Huda, Z. Mohamad, Y. Yin, and S. Hosaka,
    “Improved observation contrast of block-copolymer nanodot pattern using carbon hard mask (CHM)”
    Key Engineering Materials, 534, 126-130 (2013).
  20. S. Kurokami, Z. Mohamad, Y. Yin, S. Hosaka, T. Fuju, Y. Sueyoshi, and H. Okano
    “Piezoresistive acceleration sensor with high sensitivity and high responsiveness”
    Key Engineering Materials, 534, 169-172 (2013).

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2010年－2012年

  1. S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka,
    “Ralization of transient memory-loss with NiO-based resistive switching device”
    Appl. Phys. A., 109, 349-352 (2012).
  2. S. Hosaka, Z. Mohamad, T. Akahane, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki,
    “Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD)”
    Advanced Material Reserch 490-495, 292-295 (2012).
  3. Y. Yin, R. I. Alip, Y. Zhang, and S. Hosaka,
    “Material engineering for low power consumption and multi-level storage in lateral phase-change memory”
    Advanced Material Reserch 490-495, 3286-3290 (2012).
  4. Y. Yin, and S. Hosaka,
    “Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory”
    Jpn. J. Appl. Phys., 51, 104202 (2012).
  5. T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka,
    “Electron Beam Lithography of 15 x 15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer”
    Jpn. J. Appl. Phys., 51, 06FB02 1-4 (2012).
  6. M. Huda, J. Liu, Y. Yin, and S. Hosaka
    “Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene-Poly(dimethylsiloxane)”
    Jpn. J. Appl. Phys., 51, 06FF10 1-5 (2012).
  7. Y. Yin, and S. Hosaka
    “Controlled promotion of crystallization for application to multilevel phase-change memory”
    Appl. Phys. Lett. 100, 253503 (2012).
  8. Y. Yin, and S. Hosaka
    “Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage”
    Jpn. J. Appl. Phys., 51, 064101 1-4 (2012).
  9. Y. Yin, and S. Hosaka
    “Crystal growth suppression by N-doping into chalcogenide for application to next-generation phase-change memory”
    Key Engineering Materials, (2012).
  10. Y. Yin, and S. Hosaka
    “Influence of phase-change materials and additional layer on performance of lateral phase-change memories”
    Key Engineering Materials,(2012).
  11. H. Zhang, T. Tamura, Y. Yin, and S. Hosaka
    “Estimation of nanometer-sized EB patterning using energy deposition distribution in Monte Carlo simulation”
    Key Engineering Materials,(2012).
  12. R. Kobayashi, T. Noguchi, Y. Yin, and S. Hosaka
    “Random-access multilevel storage in phase-change memory by staircase-like pulse programming”
    Key Engineering Materials,(2012).
    13. 　　　　　　　　
  13. M. Huda, T. Tamura, Y. Yin, and S. Hosaka
    “Formation of 12-nm nanodot pattern by block copolymer self-assembly technique”
    Key Engineering Materials,(2012).
    14. 　　　　　　　　
  14. T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka
    “Guide pattern functionalization for regularly arranged PS-PDMS self-assembled nanodot pattern by brush processing”
    Key Engineering Materials,(2012).
    15. 　　　　　　　　
  15. S. Hosaka, T. Takizawa, D. Terauchi, Y. Yin, H. Sone
    “Pico-Newton controlled step-in mode NC-AFM using a quadrature frequency demodulator and a slim probe in air for CD-AFM”
    Key Engineering Materials,(2012).
  16. Y. Yin, T. Noguchi, and S. Hosaka
    “Possibility of freely achievable multilevel storage of phase-change memory by staircase-shaped pulse programming”
    Jpn. J. Appl. Phys. 50, 105201 1-3 (2011).
  17. M. Huda, T. Akahane, T. Tamura, Y. Yin,and S. Hosaka
    “Fabrication of 10-nm-order block copolymer self-assembled nanodots for high-density magnetic recording”
    Jpn. J. Appl. Phys.. 50, 06GG06 1-5 (2011).
  18. T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka
    “Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media”
    Jpn. J. Appl. Phys., 50, 06GG04 1-4 (2011).
  19. S. Hosaka, D. Terauchi, T. Takizawa, Y. Yin, and H. Sone
    “Step-in mode NC-AFM using a quadrature rrequency demodulator for observing high-aspect ratio structures in air”
    e-J. Surf. Sci. Nanotech..9, 122-125 (2011).
  20. S. Hosaka, T. Akahane, M Huda, T. Tamura, Y. Yin, N. Kihara, Y. Kamata, A. Kitsutsu
    “Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template”
    Microelectronic Eng. (2011). （accepted）
  21. Y. Yin, and S. Hosaka
    “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization”
    Microelectron. Eng, (2011). （accepted）
  22. S. Hosaka, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi
    “Nanometer resolution stress measurement of the Si gate using illumination collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe”
    Nanotechnology, 22, 025206 1-7 (2011).
  23. Hayato Sone, Shoichi Ichikawa, Yuji Matsubara, Mitsumasa Suzuki, Haruki Okano, Takashi Izumi, Sumio Hosaka
    “Prototype of Frame-Type Cantilever for Biosensor and Femtogram Detection”
    Key Engineering Materials, 459, 134-139 (2011).
  24. Y. Yin, and S. Hosaka
    “Proposed phase-change memory with a step-like channel for high-performance multi-state storage”
    Key Engineering Materials, 459, 145-150 (2011).
  25. Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka
    “Large resistance ratio for high reliability of multi-Level storage in phase-change memory”
    Key Engineering Materials, 459, 140-144 (2011).
  26. T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka
    “Fabrication of nanometer sized Si dot arrays using Ar ion milling with calixarene resist dot arrays”
    Key Engineering Materials, 459, 116-119 (2011).
  27. M. Huda, Y. Yin, and S. Hosaka
    “Self-assembled nanodot fabrication by using diblock copolymer”
    Key Engineering Materials, 459, 120-123 (2011).
  28. T. Akahane, M. Huda, Y. Yin, and S. Hosaka
    “Guide pattern for long-range-order nanofabrication of self-Assembled block copolymers”
    Key Engineering Materials, 459, 124-128 (2011).
  29. S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi
    “Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with Au inner-coated aperture-less pyramidal probe”
    Key Engineering Materials, 459, 129-133 (2011).
  30. Alpana Nayak, Takuro Tamura, Tohru Tsuruoka, Kazuya Terabe, Sumio Hosaka, Tsuyoshi Hasegawa, and Masakazu Aono
    “Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch”
    J. Phys. Chem. Lett., 1, 604-608 (2010).
  31. 佐藤淳一，羽田野毅，保坂純男
    “Al2O3基板上にY，Cu，BaF2をスパッタ成膜した前駆体膜の後熱処理によるYBCO薄膜の作製”
    電子情報通信学会論文誌, Vol.J93-C, No.9, 311-318. (2010).
  32. Sumio Hosaka, Yasunari Tanaka, Masumi Shirai, Zulfakri Mohamad, and You Yin,
    “Possibility of forming 18-nm-pitch ultrahigh density fine dot arrays for 2 Tbit/in.2 patterned media using 30-keV electron beam lithography”
    Jpn. J. Appl. Phys., 49, 046503 1-3 (2010).
  33. Sumio Hosaka, Hirokazu Koyabu, Masamichi Noro, Katsuyuki Takizawa, Hayato Sone, and You Yin
    “Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness”
    J. Nanoscience and Nanotechnology, 10, 1-6 (2010).

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2009年－2005年

  1. Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka
    “Programming margin enlargement by material engineering for multi-level storage in phase-change memory”
    Appl. Phys. Lett., 93,133503 1-3 (2009).
  2. Y. Yin, K. Ota, T. Noguchi, H. Ohno, H. Sone, and S. Hosaka
    “Multi-level-storage in N-doped Sb2Te3 based lateral phase-change memory with an additional top TiN layer”
    Jpn. J. Appl. Phys., 48, 04C063 1-4 (2009).
  3. Y. Yin, T. Noguchi, K. Ota, N. Higano, H. Sone, and S. Hosaka
    “Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory”
    Journal of Physics: Conference Series, 152, 012026 1-6 (2009).
  4. 宮地晃平，曾根逸人，保坂純男
    “超高真空非接触原子間力顕微鏡によるSi(110)再構成表面の観察”
    日本金属学会誌，第2巻，第4号，290-294 (2008).
  5. Y. Yin, K. Ota, N. Higano, H. Sone, and S. Hosaka
    “Multi-level storage in lateral top-heater phase-change memory”
    IEEE Electron Device Lett., 29, 876-878 (2008).
  6. Y. Yin, N. Higano, H. Sone, and S. Hosaka
    “Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density non-volatile memory”
    Appl. Phys. Lett., 92, 163509 1-3 (2008).
  7. S. Hosaka, Z. Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone
    “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage”
    Microelectron. Eng., 85, 774-777 (2008).
  8. Sumio Hosaka, Zulfakri Mohamad, Masumi Shirai, Hirotaka Sano, You Yin, Akihira Miyachi, Hayato Sone
    “Extremely small proximity effect in 30 keV electron beam drawing with thin calixarene resist for 20x20 nm2 pitch dot arrays”
    Appl. Phys. Express, 1, 027003-1-3 (2008).
  9. Z. bin Mohamad, M. Shirai, H. Sone, S. Hosaka, and M. Kodera
    “Formation of dot arrays with a pitch of 20 nm x 20 nm for patterned media using 30-keV EB drawing on thin calixarene resist”
    Nanotechnology, 19, 025301 1-4 (2008).
  10. Y. Yin, D. Niida, K. Ota, H. Sone, and S. Hosaka
    “Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory”
    Rev. Sci. Instrum., 78, 126101 1-3 (2007).
  11. Y. Yin, H. Sone, and S. Hosaka
    “Lateral SbTeN based multi-layer phase change memory for multi-state storage”
    Microelectron. Eng., 84, 2901-2906 (2007).
  12. Y. Yin, H. Sone, and S. Hosaka
    “Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory”
    J. Appl. Phys., 102, 064503 1-5 (2007).
  13. Y. Yin, H. Sone, and S. Hosaka
    “A chalcogenide-based device with potential for multi-state storage”
    Microelectronics J., 38, 695-699 (2007).
  14. H. Sone, T. Mishima, A. Miyachi, T. Fukuda, and S. Hosaka
    “Growth control of self-assembled ErSi2 nanowires on Si(001) and Si(110) surfaces”
    Microelectron. Eng., 84, 1491-1495 (2007).
  15. S. Hosaka, H. Sano, M. Shirai, and H. Sone
    “Nano-dot arrays with a bit pitch and a track pitch of 25 nm written by EB writing for 1 Tb/in2 storage”
    Microelectron. Eng., 84, 802-805 (2007).
  16. 寺内大輔，星野堅一，岡田大佑，曾根逸人，保坂純男
    “傾斜AFMによる側壁形状計測の可能性”
    日本金属学会誌，第71巻，第5号，頁463-468　(2007).
  17. Sumio Hosaka, Kunihiro Miyauchi, Takuro Tamura, You Yin, and Hayato Sone
    “Prototype of phase-change channel transistor for both nonvolatile memory and current control”
    IEEE Trans. ED, Vol. 53, pp. 517-523 (2007).
  18. T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, and M. Aono
    “Material dependence of switching speed of atomic switches made from silver and from copper sulfide”
    J. Phys. Conf. Ser., 61, 1157-1161 (2007).
  19. Sumio Hosaka, Takayuki Shimizu, Kentaro Mine, Keisuke Shimada and Hayato Sone
    “Possibility to form nanometer-sized optical probe in an atomic force cantilevered SNOM”
    J. Phys. Conf. Ser., 61, 425-429 (2007).
  20. Sumio Hosaka, Hirotaka Sano, Masumi Shirai, and Hayato Sone
    “Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in2 storage”
    Appl. Phys. Lett. Vol. 89, pp.223131-1 – 223131-3 (2006).
  21. Akihira Miyachi, Hayato Sone and Sumio Hosaka
    “Ultrahigh Vacuum Non-Contact Atomic Force Microscope Obsevation of Reconstructed Si(110) Surface”
    Matrials Tran. Vol. 47, No. 10, pp.2595-2598 (2006).
  22. You Yin, Hayato Sone and Sumio Hosaka
    “Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenide”
    Jpn. J. Appl. Phys. Vol. 45, No. 11, pp.8600-8603 (2006).
  23. You Yin, Hayato Sone and Sumio Hosaka
    “Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling”
    Jpn. J. Appl. Phys. Vol. 45, No. 8A, pp.6177-6181 (2006).
  24. 保坂純男, 宮地晃平，You YIN，仁井田大輔, 曾根逸人
    “GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性”
    電子情報通信学会技術研究報告, Vol. 105, No.654, pp. 1-6 (2006).
  25. Ken Murayama, Satoshi Gonda, Hajime Koyanagi, Tsuneo Terasawa and Sumio Hosaka
    “Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope,”
    Jpn. J. Appl. Phys. Vol. 45, No. 7, pp.5928-5932 (2006).
  26. Ken Murayama, Satoshi Gonda, Hajime Koyanagi, Tsuneo Terasawa and Sumio Hosaka
    “Side-Wall Measurement using Tilt-Scanning Method in Atomic Force Microscope”
    Jpn. J. Appl. Phys. Vol. 45, No.6B, pp.5423-5428 (2006).
  27. You Yin, Hayato Sone and Sumio Hosaka
    “Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories”
    Jpn. J. Appl. Phys. Vol. 45, No.6A, pp.4951-4954 (2006).
  28. You Yin, Akihira Miyachi, Daisuke Niida, Hayato Sone and Sumio Hosaka
    “Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing”
    Jpn. J. Appl. Phys. Vol. 45, No.4B, pp.3238-3242 (2006).
  29. Hayato Sone, Ayumi Ikeuchi, Takashi Izumi, Haruki Okano and Sumio Hosaka
    “Femtogram Mass Biosensor Using Self-Sensing Cantilever for Allergy Check”
    Jpn. J. Appl. Phys. Vol. 45, No.3B, pp.2301-2304 (2006).
  30. You Yin, Akihira Miyachi, Daisuke Niida, Hayato Sone and Sumio Hosaka
    “A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption”
    Jpn. J. Appl. Phys. Vol. 45, No.28, pp.L726-L729 (2006).
  31. Takuro Tamura, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama, Toshitsugu Sakamoto, Hajime Sunamura, Hisao Kawaura, Sumio Hosaka and Masakazu Aono
    “Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction”
    Jpn. J. Appl. Phys. Vol. 45, No.14, pp.L364-L366 (2006).
  32. S. Hosaka, H. Sano, K. Itoh, H. Sone
    “Possibility to form an ultrahigh packed fine pit and dot arrays for future storage using EB writing”
    Microelectronic Eng., Vol. 83, pp. 792-795 (2006).
  33. H. Sone, T. Tamura, K. Miyazaki, S. Hosaka
    “Nano-dots formation on silver sulphide surface using electron beam irradiation”
    Microelectronic Eng., Vol. 83, pp. 1487-1490 (2006).
  34. 村山健，長澤潔，森本高史，保坂純男
    “大型ウエハ対応・原子間力顕微鏡の研究(第1報，粗微動併用XYステージの応用)”
    日本機械学会論文集(C編)，72巻，2507頁-2511頁(2006).
  35. 村山健，国友裕一，森本高史，保坂純男
    “大型ウエハ対応・原子間力顕微鏡の研究(第２報，0.1nm分解能と25mm広域走査の両立)
    日本機械学会論文集(C編)，72巻，1538頁-1543頁(2006).
  36. You Yin, Hayato Sone and Sumio Hosaka
    “Dependence of electrical properties of thin GeSbTe and AgInSbTe films on annealing”
    Jpn. J. Appl. Phys.，Vol.44, pp. 6208-6212 (2005).
  37. Sumio Hosaka, Takafumi Chiyoma, Haruki Okano, Hayato Sone and Takashi Izumi
    “Possibility of femtogram mass biosensor using a self-sensing cantilever”
    Current Appl. Phys.，Vol. 6, pp.384-388 (2006).
  38. Masayuki Ono, Hayato Sone and Sumio Hosaka
    “Prototype of atomic force cantilevered SNOM based on a TTL type optical lever and a polarized illumination and detection system”
    Jpn. J. Appl. Phys., Vol. 44, pp. 5434-5437 (2005).

ページのトップへ

2004年－2000年

  1. 保坂純男, You YIN, 曾根逸人
    “超高密度記録のための相変化チャンネルトランジスタの可能性－1つのトランジスタで、メモリ格納とスイッチオンオフ制御－"
    電子情報通信学会技術研究報告, Vol.103, No.729, pp. 1-6 (2004).
  2. Sumio Hosaka, Kunihiro Miyauchi, Takuro Tamura, Hayato Sone and Hajime Koyanagi
    “Proposal for a memory transistor using phase-change and nanosize effects”
    Microelectronic Engineering, Vol. 73-74, pp. 736-740 (2004).
  3. Sumio Hosaka, Daisuke Terauchi, Hayato Sone, Takafumi Morimoto, Yukio Kenbo and Hajime Koyanagi
    ”Highly Precise Atomic Force Microscope Measurement of High-Aspect Nanostructure Free of Probe Bending Error”
    Jpn. J. Appl. Phys. Part 1, Vol. 43, pp. 3572-3575 (2004).
  4. Hayato Sone, Yoshinori Fujinuma and Sumio Hosaka
    “Picogram Mass Sensor Using Resonance Frequency Shift of Cantilever”
    Jpn. J. Appl. Phys. Part 1, Vol. 43, pp. 3648-3651 (2004).
  5. Hayato Sone, Haruki Okano and Sumio Hosaka
    “Picogram Mass Sensor Using Piezoresistive Cantilever for Biosensor”
    Jpn. J. Appl. Phys. Part 1, Vol. 43, pp. 4663-4666 (2004).
  6. Sumio Hosaka, Hayato Sone, Yoshitaka Takahashi, Toshimichi Shintani, Keizo Kato and Toshiharu Saiki
    “SNOM imaging of very fine pits formed by EB lithography for ultrahigh density optical recording”
    Microelectronic Engineering, Vol. 67-68, pp. 728-735 (2003).
  7. S. Hosaka, T. Morimoto, H. Kuroda, Y. Minomoto, Y. Kembo, and H. Koyabu
    “New atomic force microscopy imaging for an inline large scale integration process monitor”
    J. Microlith., Microfab., Microsyst., vol. 2, pp. 69-75 (2003).
  8. Tetsuya Nishida, Fumio Isshiki, Tatsundo Suzuki, Masahiro Yamaoka, Yasushi Miyauchi, Hideki Saga and Sumio Hosaka
    “XY-Stage Driving Electron-Beam Mastering with Nanometer-Accuracy Positioning for High-Density Optical Disk”
    Jpn. J. Appl. Phys.， Vol. 42, pp.772-773 (2003).
  9. F. Isshiki, S. Hosaka, M. Miyamoto, T. Suzuki, M. Yamaoka, K. Kato, M. Sugaya, A. Arimoto, Y. Miyauchi, and T. Nishida
    “XY-stage-based Electron beam Recorder for SCIPER/RPR format”
    Jpn. J. Appl. Phys.， vol. 41, pp. 1714-1716 (2002).
  10. Sumio Hosaka, Toshimichi Shintani, Hajime Koyanagi, Keizo Katoh, Tetsuya Nishida, Toshiharu Saiiki
    “Far-field and near-field optical readings of under-50nm-sized pits”
    Jpn. J. Appl. Phys., vol. 41, pp. L884-L886 (2002).
  11. Sumio Hosaka, Tatsundo Suzuki, Masahiro Yamaoka, Keizo Katoh, Fumio Isshiki, Mitsuhide Miyamoto, Yasushi Miyauchi, Akira Arimoto, and Tetsuya Nishida
    “XY stages driving EB mastering system for a high density optical recording”
    Microelectronic Eng., vol. 61-62, pp. 309-316 (2002).
  12. Takafumi Morimoto, Hiroshi Kuroda, Yasushi Minomoto, Yoshiyuki Nagano, Yukio Kembo and Sumio Hosaka
    “Atomic Force Microscopy for High Aspect Ratio Structure Metrology”
    Jpn. J. Appl. Phys., 41, pp. 4238-4241 (2002).
  13. S. Hosaka, T. Morimoto, H. Kuroda, Y. Minomoto, Y. Kembo, and H. Koyabu
    “New AFM imaging for observing a high aspect structure”
    Appl. Surf. Sci., vol. 188, pp. 467-473 (2002).
  14. S. Hosaka
    “SPM based recording toward ultrahigh density recording with trillion bits/inch2 ”
    IEEE MAG vol. Mag-37, No.2, pp.855-859 (2002).
  15. S. Hosaka, H. Koyanagi, K. Katoh, F. Isshiki, T. Suzuki, M. Miyamoto, A. Arimoto and T. Maeda
    “Fine pit pattern formation by EB-writing for a high density optical recording”
    Microelectronics Eng., Vol.57-58, pp. 281-287 (2001).
  16. S. Hosaka, T. Morimoto, K. Kuroda, H. Kunitomo, T. Hiroki, T. Kitsukawa, S. Miwa, H. Yanagimoto, and K. Murayama
    “Proposal for new atomic force microscopy (AFM) imaging for a high aspect structure (digital probing mode AFM))”
    Microelectronics Eng., Vol.57-58, pp. 651-657 (2001).
  17. A. Kikukawa, H. Koyanagi, K. Etoh, and S. Hosaka
    “In-line optical lever system for ultrasmall cantilever displacement detection”
    Jpn. J. Appl. Phys., vol. 39, pp. 1885-1889 (2000).
  18. F. Issiki, K. Itoh, K. Etoh, and S. Hosaka
    “1.5-Mbit/s direct readout of line-and-space patterns using a scanning near-field optical microscopy probe slider with air-bearing control”
    Appl. Phys. Lett., vol. 76 pp.804-806 (2000).
  19. S. Hosaka, K. Etoh, A. Kikukawa, and H. Koyanagi
    “Mega-hertz silicon AFM cantilever and high-speed readout in AFM-based recording”
    J. Vac. Sci. Technol., vol. B18, pp.94-98 (2000).
  20. S. Hosaka, K. Etoh, A. Kikukawa, H. Koyanagi, and K. Itoh
    “6.6MHz silicon AFM cantilever for high-speed readout in AFM based recording”
    Microelectronic Eng., vol. 46, pp.109-112 (2000).

ページのトップへ

1999年以前

  1. A. Kikukawa and S. Hosaka
    “Semiconductor acousto-electric potential detection using a force microscope”
    Appl. Surf. Sci., vol.140, pp.394-399 (1999).
  2. S. Hosaka, T.Shintani, A. Kikukawa, and K. Itoh
    “Nano-optical image and probe in a scanning near-field optical microscope”
    Appl. Surf. Sci., vol. 140, pp.388-393 (1999).
  3. S. Hosaka, T. Shintani, A. Kikukawa, and K. Itoh
    “Evaluation of nano-optical probe from scanning near-field optical microscope images”
    J. Microscopy vol.194 , pp.369-373 (1999).
  4. K. Ito, T. Shintani, S. Hosaka, and M. Muranishi
    “A cavity-SNOM (scanning near-field optical microscopy) head using a laser diode”
    Jpn. J. Appl. Phys., vol. 37, pp. 3759-3763 (part 1) (1998).
  5. K. Nakamura, H. Koyanagi, and S. Hosaka
    “Narrow pitch tracking using optical head for recording with atomic force microscopy”
    Jpn. J. Appl. Phys., vol.37, pp. 2271-2273 (1998).
  6. 小柳肇, 保坂純男, 中村公夫, 菊川敦, 江藤公利, 宮本光秀
    “原子間力顕微鏡探針を用いた加圧変調ナノメータ記録”
    真空, vol. 40, pp. 767-772 (1997).
  7. S. Hosaka, H. Koyanagi, A. Kikukawa, M. Miyamoto, K. Nakamura, and K. Etoh
    “Force modulation atomic force microscopy recording for ultrahigh density recording”
    J. Vac. Sci. Technol., vol. B15, pp.788-792 (1997).
  8. S. Hosaka, A. Kikukawa, H. Koyanagi, T. Shintani, M. Miyamoto, K. Nakamura, and K. Etoh
    “SPM -based data storage for ultrahigh density recording”
    Nanotechnology, vol. 8, pp. A58-A62 (1997).
  9. S. Hosaka, T. Shintani, M. Miyamoto, A. Kikukawa, A. Hirotsune, M. Terao, M. Yoshida, K. Fujita, and S. Kammer
    “Phase change recording using a scanning near-field optical microscope”
    J. Appl. Phys., vol. 79, pp.8082-8086 (1996).
  10. M. Miyamoto, T. Shintani, S. Hosaka, and R. Imura
    “Thermal simulation analysis of scanning near-field optical microscope point heating mechanisms”
    Jpn. J. Appl. Phys., vol. 35, pp. L584-L586 (1996).
  11. S. Hosaka
    “SPM based storage”
    IEEE Tran. Mag. Vol. 32, pp. 1873-1877 (1996.5).
  12. S. Hosaka, T. Shintani, M. Miyamoto, A. Hirotsune, M. Terao, M. Yoshida, S. Honma, and S. Kammer
    “Scanning near-field optical microscope with a laser diode and nanometer-sized bit recording”
    Thin Solid Films, vol.273, pp.122-127 (1996).
  13. S. Hosaka, T. Shintani, M. Miyamoto, A. Hirotsune, M. Terao, M. Yoshida, K. Fujita, and S. Kammer
    “Nanometer-sized phase-change recording using a scanning near-field optical microscope with a laser diode”
    Jpn. J. Appl. Phys., vol.35.pp.443-447 (1996).
  14. T. Shintani, Y. Maruyama, K. Nakamura, S. Hosaka, R. Imura, K. Fujita, M. Yoshida, and S. Kammer
    “Phase change writing in a GeSbTe film with scanning near-field optical microscope”
    Ultramicroscopy, vol.61, pp.285-289 (1996.1)
  15. S. Hosaka, S. Hosoki, T. Hasegawa, H. Koyanagi, T. Shintani, and M. Miyamoto
    “Fabrication of nanostructures using a scanning probe microscope”
    J. Vac. Sci. Technol. Vol. B13, pp.2813-2818 (1995).
  16. A. Kikukawa, H. Awano, S. Hosaka, Y. Honda, and R. Imura
    “Domain observations of a durability tested TbFeCo magneto-optical disk using magnetic force microscopy”
    Appl. Phys. Lett., vol.67, pp.1480-1482 (1995).
  17. A. Kikukawa, S. Hosaka, and R. Imura)
    “Silicon pn junction imaging and characterizations using sensitivity enhanced Kelvin probe microscope”
    Appl. Phys. Lett., 66, pp.3510-3512 (1995).
  18. J. Nakamura, M. Miyamoto, S. Hosaka, and H. Koyanagi
    “High-density thermomagnetic recording method using a scanning tunneling microscope”
    J. Apply. Phys., vol. 77, pp.779-781 (1995).
  19. S. Hosaka, A. Kikukawa, Y. Honda, and T. Hasegawa
    “Just-on-surface magnetic force microscopy”
    Appl. Phys. Lett., vol. 65, pp.3407-3409 (1994).
  20. S. Hosoki, S. Hosaka, and T. Hasegawa
    “Surface modification of MoS2 using an STM”
    Appl. Surf. Sci. vol. 60/61, pp.643-647 (1991).
  21. S. Hosaka, R. Sagara, T. Hasegawa, and S. Hosoki
    “Tunneling barrier height imaging and polycrystalline Si surface observations”
    J. Vac. Sci. Technol. Vol. A8, pp.270 –274 (1990).

外：54編